Product Summary
The 2MBI100N-060 is an IGBT MODULE ( N series ).
Parametrics
2MBI100N-060 absolute maximum ratings: (1)Collector Emitter Voltage VCES: 600 V; (2)Gate Emitter Voltage VGES: ± 20 V; (3)Collector Current: Continuous IC: 100A; 1ms IC PULSE 200A; Continuous -IC 100A; 1ms -IC PULSE 200A; (4)Max. Power Dissipation PC: 400 W; (5)Operating Temperature Tj: +150 ℃; (6)Storage Temperature Tstg: -40 to +125 ℃; (7)Isolation Voltage A.C. 1min. Vis: 2500 V.
Features
2MBI100N-060 features: (1)Square RBSOA; (2)Low Saturation Voltage; (3)Less Total Power Dissipation; (4)Improved FWD Characteristic; (5)Minimized Internal Stray Inductance; (6)Overcurrent Limiting Function (~3 Times Rated Current).
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||
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2MBI100N-060-03 |
Other |
Data Sheet |
Negotiable |
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Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||
2MBI100N-060-03 |
Other |
Data Sheet |
Negotiable |
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2MBI100NB-120 |
Other |
Data Sheet |
Negotiable |
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2MBI100NC-120 |
Other |
Data Sheet |
Negotiable |
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2MBI100NE-120 |
Other |
Data Sheet |
Negotiable |
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2MBI100P-140 |
Other |
Data Sheet |
Negotiable |
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2MBI100PC-140 |
Other |
Data Sheet |
Negotiable |
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