Product Summary

The 2MBI100N-060 is an IGBT MODULE ( N series ).

Parametrics

2MBI100N-060 absolute maximum ratings: (1)Collector Emitter Voltage VCES: 600 V; (2)Gate Emitter Voltage VGES: ± 20 V; (3)Collector Current: Continuous IC: 100A; 1ms IC PULSE 200A; Continuous -IC 100A; 1ms -IC PULSE 200A; (4)Max. Power Dissipation PC: 400 W; (5)Operating Temperature Tj: +150 ℃; (6)Storage Temperature Tstg: -40 to +125 ℃; (7)Isolation Voltage A.C. 1min. Vis: 2500 V.

Features

2MBI100N-060 features: (1)Square RBSOA; (2)Low Saturation Voltage; (3)Less Total Power Dissipation; (4)Improved FWD Characteristic; (5)Minimized Internal Stray Inductance; (6)Overcurrent Limiting Function (~3 Times Rated Current).

Diagrams

2MBI100N-060 Equivalent Circuit

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
2MBI100N-060-03
2MBI100N-060-03

Other


Data Sheet

Negotiable 
Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
2MBI100N-060-03
2MBI100N-060-03

Other


Data Sheet

Negotiable 
2MBI100NB-120
2MBI100NB-120

Other


Data Sheet

Negotiable 
2MBI100NC-120
2MBI100NC-120

Other


Data Sheet

Negotiable 
2MBI100NE-120
2MBI100NE-120

Other


Data Sheet

Negotiable 
2MBI100P-140
2MBI100P-140

Other


Data Sheet

Negotiable 
2MBI100PC-140
2MBI100PC-140

Other


Data Sheet

Negotiable