Product Summary

The MRF9060 is a RF Power Field Effect Transistor. The MRF9060 is designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large.signal, common.source amplifier applications in 26 volt base station equipment.

Parametrics

MRF9060 absolute maximum ratings: (1)Drain Source Voltage VDSS: -0.5 to +65 Vdc; (2)Gate Source Voltage VGS: -0.5, +15 Vdc; (3)Total Device Dissipation @ TC = 25鈩? 159 W; (4)Derate above 25鈩? 0.91W/鈩? (5)Storage Temperature Range Tstg: -65 to +150 鈩? (6)Operating Junction Temperature TJ: 200 鈩?

Features

MRF9060 features: (1)Integrated ESD Protection; (2)Designed for Maximum Gain and Insertion Phase Flatness; (3)Capable of Handling 10:1 VSWR, @ 26 Vdc, 945 MHz, 60 Watts CW Output Power; (4)Excellent Thermal Stability; (5)Characterized with Series Equivalent Large.Signal Impedance Parameters; (6)In Tape and ReelR1 Suffix = 500 Units per 32 mm, 13 inch Reel; (7)Low Gold Plating Thickness on LeadsL Suffix Indicates 40渭 Nominal.

Diagrams

<IMG alt="MRF9060 Test Circuit" src="http://www.seekic.com/uploadfile/ic-mfg/20126221576682.jpg" border=0>

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
MRF9060
MRF9060

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Data Sheet

Negotiable 
MRF9060LR1
MRF9060LR1

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Data Sheet

0-358: $26.96
358-500: $25.60
MRF9060LR5
MRF9060LR5

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MRF9060LSR1
MRF9060LSR1

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MRF9060LSR5
MRF9060LSR5

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Data Sheet

Negotiable 
MRF9060NBR1
MRF9060NBR1


IC MOSFET RF N-CHAN TO272-2

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MRF9060NR1
MRF9060NR1

Freescale Semiconductor

Transistors RF MOSFET Power 60W 1GHZ FET TO-270

Data Sheet

Negotiable 
MRF9060R1
MRF9060R1

Other


Data Sheet

Negotiable