KM29W32000AT

Product Summary

The KM29W32000AT is a 4M(4,194,304)x8bit NAND Flash Memory with a spare 128K(131,072)x8bit. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. A program operation programs the 528-byte page in typically 250ms and an erase operation can be performed in typically 2ms on an 8K-byte block. Data in the page can be read out at 50ns cycle time per byte. The I/O pins serve as the ports for address and data input/output as well as command inputs. The on-chip write controller automates all program and erase system functions, including pulse repetition, where required, and internal verify and margining of data. Even the write-intensive systems can take advantage of the KM29W32000AT extended reliability of one million program/erase cycles by providing either ECC(Error Correction Code) or real time mapping-out algorithm. These algorithms have been implemented in many mass storage applications and also the spare 16 bytes of a page combined with the other 512 bytes can be utilized by system-level ECC. The KM29W32000AT is an optimum solution for large nonvolatile storage application such as solid state storage, digital voice recorder, digital still camera and other portable applications requiring nonvolatility.

Parametrics

KM29W32000AT absolute maximum ratings: (1)Voltage on any pin relative to VSS VIN: -0.6 to +7.0 V; (2)Temperature Under Bias: KM29W32000AT, TBIAS: -10 to +125℃; KM29W32000AIT: -40 to +125; (3)Storage Temperature TSTG: -65 to +150 ℃; (4)Short Circuit Output Current IOS: 5 mA.

Features

KM29W32000AT features: (1)Voltage Supply : 2.7V to 5.5V; (2)Organization, Memory Cell Array : (4M + 128K)bit x 8bit; Data Register: (512 + 16)bit x8bit; (3)Automatic Program and Erase; (4)Page Program : (512 + 16)Byte; (5)Block Erase : (8K + 256)Byte; (6)Status Register; (7)528-Byte Page Read Operation; (8)Random Access : 10μs(Max.); (9)Serial Page Access : 50ns(Min.); (10)Fast Write Cycle Time; (11)Program time : 250μs(typ.); (12)Block Erase time : 2ms(typ.); (13)Command/Address/Data Multiplexed I/O port; (14)Hardware Data Protection; (15)Program/Erase Lockout During Power Transitions; (16)Reliable CMOS Floating-Gate Technology; (17)Endurance : 1M Program/Erase Cycles; (18)Data Retention : 10 years; (19)Command Register Operation; (20)44(40) Lead TSOP Type II (400mil / 0.8 mm pitch): Forward Type.

Diagrams